Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Related Articles Inelastic carrier lifetime in bilayer graphene Appl. Phys. Lett. 100, 032106 (2012) Carrier dynamics in bulk GaN J. Appl. Phys. 111, 023702 (2012) Photon recycling effect on electroluminescent refrigeration J. Appl. Phys. 111, 014511 (2012) Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy J. Appl....

Temperature Dependence of Current Conduction in Semi-Insulating 4H-SiC Epitaxial Layer

Identification and carrier dynamics of the dominant lifetime limiting defect in n 4H-SiC epitaxial layers

Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-expone...